IRF150 спецификации: Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS = 100V, RDS(on) = 0.055 Ohm, ID = 38A

Аналогичные IRF150

IRF1010E
- HEXFET power MOSFET. VDSS = 60V, RDS(on) = 12 mOhm, ID = 84A.
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IRF130
- Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS =100V, RDS(on) = 0.18 Ohm, ID = 14A

IRF150 Datasheet и спецификация

Производитель : IR

Упаковка : TO-3

Pins : 3

Темп. диапазон : Минимум -55 °C | Макс 150 °C

Размер : 164 KB

Заявка : Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS = 100V, RDS(on) = 0.055 Ohm, ID = 38A