IRF1010N спецификации: HEXFET power MOSFET. VDSS = 55V, RDS(on) = 11 mOhm, ID = 85A.

Аналогичные IRF1010N

IRF1010E
- HEXFET power MOSFET. VDSS = 60V, RDS(on) = 12 mOhm, ID = 84A.
IRF1010EL
- HEXFET power MOSFET. VDSS = 60V, RDS(on) = 12 mOhm, ID = 84A.
IRF1010ES
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IRF1010N
- HEXFET power MOSFET. VDSS = 55V, RDS(on) = 11 mOhm, ID = 85A.
IRF1010NL
- HEXFET power MOSFET. VDSS = 55V, RDS(on) = 11 mOhm, ID = 85A.
IRF1010NS
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IRF1010N Datasheet и спецификация

Производитель : IR

Упаковка :

Pins : 3

Темп. диапазон : Минимум -55 °C | Макс 175 °C

Размер : 232 KB

Заявка : HEXFET power MOSFET. VDSS = 55V, RDS(on) = 11 mOhm, ID = 85A.