IRF1010NS спецификации: HEXFET power MOSFET. VDSS = 55V, RDS(on) = 11 mOhm, ID = 85A.

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IRF1010NS Datasheet и спецификация

Производитель : IR

Упаковка : DDPak

Pins : 3

Темп. диапазон : Минимум -55 °C | Макс 175 °C

Размер : 160 KB

Заявка : HEXFET power MOSFET. VDSS = 55V, RDS(on) = 11 mOhm, ID = 85A.