IRF1010E спецификации: HEXFET power MOSFET. VDSS = 60V, RDS(on) = 12 mOhm, ID = 84A.

Аналогичные IRF1010E

IRF1010E
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IRF1010E Datasheet и спецификация

Производитель : IR

Упаковка :

Pins : 3

Темп. диапазон : Минимум -55 °C | Макс 175 °C

Размер : 214 KB

Заявка : HEXFET power MOSFET. VDSS = 60V, RDS(on) = 12 mOhm, ID = 84A.