IRF1010ES спецификации: HEXFET power MOSFET. VDSS = 60V, RDS(on) = 12 mOhm, ID = 84A.

Аналогичные IRF1010ES

IRF1010E
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IRF1010ES Datasheet и спецификация

Производитель : IR

Упаковка : DDPak

Pins : 3

Темп. диапазон : Минимум -55 °C | Макс 175 °C

Размер : 135 KB

Заявка : HEXFET power MOSFET. VDSS = 60V, RDS(on) = 12 mOhm, ID = 84A.