Аналогичные IRF130

  • IRF1010E
    • HEXFET power MOSFET. VDSS = 60V, RDS(on) = 12 mOhm, ID = 84A.
  • IRF1010EL
    • HEXFET power MOSFET. VDSS = 60V, RDS(on) = 12 mOhm, ID = 84A.
  • IRF1010ES
    • HEXFET power MOSFET. VDSS = 60V, RDS(on) = 12 mOhm, ID = 84A.
  • IRF1010N
    • HEXFET power MOSFET. VDSS = 55V, RDS(on) = 11 mOhm, ID = 85A.
  • IRF1010NL
    • HEXFET power MOSFET. VDSS = 55V, RDS(on) = 11 mOhm, ID = 85A.
  • IRF1010NS
    • HEXFET power MOSFET. VDSS = 55V, RDS(on) = 11 mOhm, ID = 85A.
  • IRF1104
    • HEXFET power MOSFET. VDSS = 40V, RDS(on) = 0.009 Ohm, ID = 100A.
  • IRF130
    • Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS =100V, RDS(on) = 0.18 Ohm, ID = 14A

IRF130 Datasheet и спецификация

Производитель : IR 

Упаковка : TO-3 

Pins : 3 

Темп. диапазон : Минимум -55 °C | Макс 150 °C

Размер : 161 KB

Заявка : Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS =100V, RDS(on) = 0.18 Ohm, ID = 14A 

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