IRF1407S спецификации: HEXFET power MOSFET. VDSS = 75V, RDS(on) = 0.0078 Ohm, ID = 100A.

Аналогичные IRF1407S

IRF1010E
- HEXFET power MOSFET. VDSS = 60V, RDS(on) = 12 mOhm, ID = 84A.
IRF1010EL
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IRF1010ES
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IRF1010N
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IRF1010NS
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IRF1407S Datasheet и спецификация

Производитель : IR

Упаковка : DDPak

Pins : 3

Темп. диапазон : Минимум -55 °C | Макс 175 °C

Размер : 174 KB

Заявка : HEXFET power MOSFET. VDSS = 75V, RDS(on) = 0.0078 Ohm, ID = 100A.