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IRG4PH40KD спецификации: Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 2.74V @ VGE = 15V, IC = 15A
Аналогичные IRG4PH40KD
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IRG4PH40KD Datasheet и спецификация
Производитель : IR
Упаковка : TO-247AC
Pins : 3
Темп. диапазон : Минимум -55 °C | Макс 150 °C
Размер : 238 KB
Заявка : Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 2.74V @ VGE = 15V, IC = 15A
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