IRG4BC10K спецификации: Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.39V @ VGE = 15V, IC = 5.0A

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IRG4BC10K
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IRG4BC10SD-L
- Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A
IRG4BC10SD-L
- Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A
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IRG4BC10K Datasheet и спецификация

Производитель : IR

Упаковка :

Pins : 3

Темп. диапазон : Минимум -55 °C | Макс 150 °C

Размер : 173 KB

Заявка : Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.39V @ VGE = 15V, IC = 5.0A