IRG4PH30K спецификации: Insulated gate bipolar transistor. VCES = 1200V, VCE(on)typ. = 3.10V @ VGE = 15V, IC = 10A

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- Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A
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IRG4PH30K Datasheet и спецификация

Производитель : IR

Упаковка : TO-247AC

Pins : 3

Темп. диапазон : Минимум -55 °C | Макс 150 °C

Размер : 177 KB

Заявка : Insulated gate bipolar transistor. VCES = 1200V, VCE(on)typ. = 3.10V @ VGE = 15V, IC = 10A