IRG4BC30K-S спецификации: Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16A

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IRG4BC30K-S Datasheet и спецификация

Производитель : IR

Упаковка : DDPak

Pins : 3

Темп. диапазон : Минимум -55 °C | Макс 150 °C

Размер : 177 KB

Заявка : Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16A