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IRG4BC20MD-S спецификации: Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.85V @ VGE = 15V, IC = 11A
Аналогичные IRG4BC20MD-S
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IRG4BC20MD-S Datasheet и спецификация
Производитель : IR
Упаковка : DDPak
Pins : 3
Темп. диапазон : Минимум -55 °C | Макс 150 °C
Размер : 219 KB
Заявка : Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.85V @ VGE = 15V, IC = 11A
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