WMBT5551LT1 спецификации: NPN silicon transistor. Collector-emitter voltage 160V. Collector-base voltage 180V. Emitter-base voltage 6.0V

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WMBT5551LT1 Datasheet и спецификация

Производитель : WingShing

Упаковка : SOT-23

Pins : 3

Темп. диапазон : Минимум 0 °C | Макс 0 °C

Размер : 39 KB

Заявка : NPN silicon transistor. Collector-emitter voltage 160V. Collector-base voltage 180V. Emitter-base voltage 6.0V