WMBT5401LT1 спецификации: PNP silicon transistor. Collector-emitter voltage -150V. Collector-base voltage -160V. Emitter-base voltage -5.0V

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WMBT5401LT1 Datasheet и спецификация

Производитель : WingShing

Упаковка : SOT-23

Pins : 3

Темп. диапазон : Минимум 0 °C | Макс 0 °C

Размер : 37 KB

Заявка : PNP silicon transistor. Collector-emitter voltage -150V. Collector-base voltage -160V. Emitter-base voltage -5.0V