WMBT3906 спецификации: PNP epitaxial silicon high voltage transistor Power dissipation 225mW. Collector current(max) 0.2A

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WMBT3906 Datasheet и спецификация

Производитель : WingShing

Упаковка : SOT-89

Pins : 3

Темп. диапазон : Минимум 0 °C | Макс 0 °C

Размер : 72 KB

Заявка : PNP epitaxial silicon high voltage transistor Power dissipation 225mW. Collector current(max) 0.2A