F1006 спецификации: Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

Аналогичные F1006

F1001
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1001C
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1003
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1004
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1005
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1006
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1007
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1006 Datasheet и спецификация

Производитель : Polyfet RF

Упаковка :

Pins : 4

Темп. диапазон : Минимум -65 °C | Макс 150 °C

Размер : 40 KB

Заявка : Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor