F1001C спецификации: Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

Аналогичные F1001C

F1001
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1001C
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1003
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F1004
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F1005
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F1006
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F1007
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F1001C Datasheet и спецификация

Производитель : Polyfet RF

Упаковка :

Pins : 6

Темп. диапазон : Минимум -65 °C | Макс 150 °C

Размер : 36 KB

Заявка : Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor