Аналогичные F1005

  • F1001
    • Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F1001C
    • Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F1003
    • Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F1004
    • Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F1005
    • Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F1006
    • Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F1007
    • Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1005 Datasheet и спецификация

Производитель : Polyfet RF 

Упаковка :  

Pins : 4 

Темп. диапазон : Минимум -65 °C | Макс 150 °C

Размер : 40 KB

Заявка : Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor 

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