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IRFBG20 спецификации: HEXFET power MOSFET. VDSS = 1000V, RDS(on) = 11Ohm, ID = 1.4A
Аналогичные IRFBG20
- IRFB11N50A
- HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.52 Ohm, ID = 11A
- IRFB13N50A
- HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.450 Ohm, ID = 14A
- IRFB18N50K
- HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.26 Ohm, ID = 17A
- IRFB23N15D
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- IRFB23N20D
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- IRFB260N
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- IRFB31N20D
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- IRFB33N15D
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IRFBG20 Datasheet и спецификация
Производитель : IR
Упаковка :
Pins : 3
Темп. диапазон : Минимум -55 °C | Макс 150 °C
Размер : 185 KB
Заявка : HEXFET power MOSFET. VDSS = 1000V, RDS(on) = 11Ohm, ID = 1.4A
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