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IRFB31N20D спецификации: HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.082 Ohm, ID = 31A
Аналогичные IRFB31N20D
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- IRFB23N20D
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- IRFB31N20D
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- IRFB33N15D
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IRFB31N20D Datasheet и спецификация
Производитель : IR
Упаковка :
Pins : 3
Темп. диапазон : Минимум -55 °C | Макс 175 °C
Размер : 208 KB
Заявка : HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.082 Ohm, ID = 31A
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