Аналогичные IRFBC30L

  • IRFB11N50A
    • HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.52 Ohm, ID = 11A
  • IRFB13N50A
    • HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.450 Ohm, ID = 14A
  • IRFB18N50K
    • HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.26 Ohm, ID = 17A
  • IRFB23N15D
    • HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.090 Ohm, ID = 23A
  • IRFB23N20D
    • HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.10 Ohm, ID = 24A
  • IRFB260N
    • HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.040 Ohm, ID = 56A
  • IRFB31N20D
    • HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.082 Ohm, ID = 31A
  • IRFB33N15D
    • HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.056 Ohm, ID = 33A

IRFBC30L Datasheet и спецификация

Производитель : IR 

Упаковка : TO-262 

Pins : 3 

Темп. диапазон : Минимум -55 °C | Макс 150 °C

Размер : 161 KB

Заявка : HEXFET power MOSFET. VDSS = 600V, RDS(on) = 2.2 Ohm, ID = 3.6A 

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