Путь:OKDatasheet > Полупроводниковые Datasheet > IR Datasheet > IRFBA90N20D
IRFBA90N20D спецификации: HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.023 Ohm, ID = 98A
Аналогичные IRFBA90N20D
- IRFB11N50A
- HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.52 Ohm, ID = 11A
- IRFB13N50A
- HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.450 Ohm, ID = 14A
- IRFB18N50K
- HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.26 Ohm, ID = 17A
- IRFB23N15D
- HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.090 Ohm, ID = 23A
- IRFB23N20D
- HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.10 Ohm, ID = 24A
- IRFB260N
- HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.040 Ohm, ID = 56A
- IRFB31N20D
- HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.082 Ohm, ID = 31A
- IRFB33N15D
- HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.056 Ohm, ID = 33A
IRFBA90N20D Datasheet и спецификация
Производитель : IR
Упаковка : Super-220
Pins : 3
Темп. диапазон : Минимум -55 °C | Макс 175 °C
Размер : 107 KB
Заявка : HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.023 Ohm, ID = 98A
IRFBA90N20D Скачать PDF