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IRFB9N30A спецификации: HEXFET power MOSFET. VDSS = 300V, RDS(on) = 0.45 Ohm, ID = 9.3A
Аналогичные IRFB9N30A
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IRFB9N30A Datasheet и спецификация
Производитель : IR
Упаковка :
Pins : 3
Темп. диапазон : Минимум -55 °C | Макс 150 °C
Размер : 150 KB
Заявка : HEXFET power MOSFET. VDSS = 300V, RDS(on) = 0.45 Ohm, ID = 9.3A
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