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IRFB59N10D спецификации: HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.025 Ohm, ID = 58A
Аналогичные IRFB59N10D
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IRFB59N10D Datasheet и спецификация
Производитель : IR
Упаковка :
Pins : 3
Темп. диапазон : Минимум -55 °C | Макс 175 °C
Размер : 151 KB
Заявка : HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.025 Ohm, ID = 58A
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