BUT11AF спецификации: NPN silicon diffused power transistor. For switching power circuits

Аналогичные BUT11AF

BUT11
- NPN silicon transistor. High voltage power switcing applications. Collector-base voltage 850V. Collector-emitter voltage 400V. Emitter-base voltage 9V.
BUT11
- NPN silicon transistor. High voltage power switcing applications. Collector-base voltage 850V. Collector-emitter voltage 400V. Emitter-base voltage 9V.
BUT11A
- NPN silicon transistor. High voltage power switcing applications. Collector-base voltage 1000V. Collector-emitter voltage 450V. Emitter-base voltage 9V.
BUT11AF
- NPN silicon diffused power transistor. For switching power circuits
BUT12
- NPN silicon diffused power transistor. For switching power circuits
BUT12A
- NPN silicon diffused power transistor. For switching power circuits
BUT12AF
- NPN silicon diffused power transistor. For switching power circuits

BUT11AF Datasheet и спецификация

Производитель : WingShing

Упаковка : TO-220F

Pins : 3

Темп. диапазон : Минимум 0 °C | Макс 0 °C

Размер : 76 KB

Заявка : NPN silicon diffused power transistor. For switching power circuits