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BUT11 спецификации: NPN silicon transistor. High voltage power switcing applications. Collector-base voltage 850V. Collector-emitter voltage 400V. Emitter-base voltage 9V.
Аналогичные BUT11
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- NPN silicon transistor. High voltage power switcing applications. Collector-base voltage 850V. Collector-emitter voltage 400V. Emitter-base voltage 9V.
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- NPN silicon transistor. High voltage power switcing applications. Collector-base voltage 850V. Collector-emitter voltage 400V. Emitter-base voltage 9V.
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BUT11 Datasheet и спецификация
Производитель : WingShing
Упаковка : TO-220
Pins : 3
Темп. диапазон : Минимум 0 °C | Макс 0 °C
Размер : 24 KB
Заявка : NPN silicon transistor. High voltage power switcing applications. Collector-base voltage 850V. Collector-emitter voltage 400V. Emitter-base voltage 9V.
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