Аналогичные MJD127-1

  • MJD112
    • COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
  • MJD117
    • COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
  • MJD122
    • COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
  • MJD122-1
    • "NPN darlington transistor for high DC current gain, 100V, 5A"
  • MJD122T4
    • NPN darlington transistor for high DC current gain, 100V, 5A
  • MJD127-1
    • PNP darlington transistor for high DC current gain, 100V, 5A
  • MJD127T4
    • PNP darlington transistor for high DC current gain, 100V, 5A

MJD127-1 Datasheet и спецификация

Производитель : ST Microelectronics 

Упаковка : TO-251 

Pins : 3 

Темп. диапазон : Минимум -65 °C | Макс 150 °C

Размер : 100 KB

Заявка : PNP darlington transistor for high DC current gain, 100V, 5A 

MJD127-1 Скачать PDF