Аналогичные MJD112

  • MJD112
    • COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
  • MJD117
    • COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
  • MJD122
    • COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
  • MJD122-1
    • "NPN darlington transistor for high DC current gain, 100V, 5A"
  • MJD122T4
    • NPN darlington transistor for high DC current gain, 100V, 5A
  • MJD127-1
    • PNP darlington transistor for high DC current gain, 100V, 5A
  • MJD127T4
    • PNP darlington transistor for high DC current gain, 100V, 5A

MJD112 Datasheet и спецификация

Производитель : ST Microelectronics 

Упаковка :  

Pins : 0 

Темп. диапазон : Минимум 0 °C | Макс 0 °C

Размер : 92 KB

Заявка : COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS 

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