2SA1963 спецификации: PNP epitaxial planar silicon transistor, high-frequency low-noise amp, ultrahigh-speed switching application

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2SA1963 Datasheet и спецификация

Производитель : SANYO

Упаковка : 2018B

Pins : 3

Темп. диапазон : Минимум 0 °C | Макс 0 °C

Размер : 141 KB

Заявка : PNP epitaxial planar silicon transistor, high-frequency low-noise amp, ultrahigh-speed switching application