2SA1016 спецификации: PNP epitaxial planar silicon transistor, high voltag, low-noise amp application

Аналогичные 2SA1016

2SA1011
- PNP epitaxial planar silicon transistor, high-voltag switching, AF power amp, 100W output predriver application
2SA1016
- PNP epitaxial planar silicon transistor, high voltag, low-noise amp application
2SA1016K
- PNP epitaxial planar silicon transistor, high voltag, low-noise amp application
2SA1177
- PNP epitaxial planar silicon transistor, HF amp application
2SA1207
- PNP epitaxial planar silicon transistor, high-voltage switching, AF 60W predriver application
2SA1208
- PNP epitaxial planar silicon transistor, high-voltage switching, audio 80W output predriver application
2SA1209
- PNP epitaxial planar silicon transistor, 160V/140mA high-voltage switching and AF 100W predriver application
2SA1209
- PNP transistors 160V/140mA high-voltage switching and AF 100W predriver applications

2SA1016 Datasheet и спецификация

Производитель : SANYO

Упаковка : 2003A

Pins : 3

Темп. диапазон : Минимум 0 °C | Макс 0 °C

Размер : 139 KB

Заявка : PNP epitaxial planar silicon transistor, high voltag, low-noise amp application