F1027 спецификации: 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

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F1027
- 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1027 Datasheet и спецификация

Производитель : Polyfet RF

Упаковка :

Pins : 4

Темп. диапазон : Минимум -65 °C | Макс 150 °C

Размер : 43 KB

Заявка : 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor