VTE1281F спецификации: GaAlAs infrared emitting diode. Irradiance(typ) 0.21 mW/cm2 (distance 36 mm, diameter 6.4 mm).

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VTE1281F
- GaAlAs infrared emitting diode. Irradiance(typ) 0.21 mW/cm2 (distance 36 mm, diameter 6.4 mm).

VTE1281F Datasheet и спецификация

Производитель : PerkinElmer

Упаковка : T-1.75

Pins : 2

Темп. диапазон : Минимум -40 °C | Макс 100 °C

Размер : 26 KB

Заявка : GaAlAs infrared emitting diode. Irradiance(typ) 0.21 mW/cm2 (distance 36 mm, diameter 6.4 mm).