VTE1113 спецификации: GaAs infrared emitting diode. Irradiance(typ) 15 mW/cm2 at distance 36 mm, diameter 6.4 mm.

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- GaAlAs infrared emitting diode. Irradiance(typ) 28 mW/cm2 at distance 36 mm, diameter 6.4 mm.
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VTE1113 Datasheet и спецификация

Производитель : PerkinElmer

Упаковка : TO-46

Pins : 2

Темп. диапазон : Минимум -55 °C | Макс 125 °C

Размер : 27 KB

Заявка : GaAs infrared emitting diode. Irradiance(typ) 15 mW/cm2 at distance 36 mm, diameter 6.4 mm.