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P6SMBJ45 FR1G SD1020YT 1N5408 1N5397 1.5SMCJ8.0C 1.5SMCJ17C 1SMB5937 2EZ12 MMBZ5252B 2EZ13 SA48 1F3G PS151 PG4003 1N4007 TSP065C P4KE200CA PS304R SD830YS P4SMAJ11A SD630CS P4SMAJ18CA 3.0SMCJ24CA CP602 P4SMAJ11 MMBZ5231B GBPC15005W
Name component | Производитель | Заявка |
---|---|---|
P4KE200A | PanJit | Glass passivated junction transient voltage suppressor. 400 Watt peak power. 1.0 Watt steady state. Vrwm = 171.00V, Vbr(min/max) = 190.00/210.00V, It = 1 mA. |
MMSZ5254BS | PanJit | Surface mount silicon zener diode. Nominal zener voltage Vz = 27 V @ Izt. 200 mWatts zener diode. |
P6SMBJ45 | PanJit | Surfase mount transient voltage suppressor. 600W. Vrwm = 45 V. Vbr(min/max) = 50.0/63.3 V. It = 1.0 mA. Ir = 5 uA. Vc = 80.3 V. Ipp = 7.5 A. |
FR1G | PanJit | Surface mount fast switching rectifier. Max recurrent peak reverse voltage 400V. Max average forward rectified current 1.0 A. |
SD1020YT | PanJit | DPak surfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 20 V. Max average forward rectified current at Tc = 75degC 10.0 A. |
1N5408 | PanJit | High current plastic silicon rectifier. Max reccurent peak reverse voltage 1000V. Max average forward rectified current 3.0A. |
1N5397 | PanJit | Plastic silicon rectifier. Max reccurent peak reverse voltage 600V. Max average forward rectified current 1.5A. |
1.5SMCJ8.0C | PanJit | Surfase mount transient voltage suppressor. 1500W peak power pulse. Vrwm = 8.0V; Vbr(min/max) = 8.89/11.30V @ It = 1.0mA; Ir(@ Vrwm) = 100uA; Vc = 15.0V @ Ipp = 100.0A |
1.5SMCJ17C | PanJit | Surfase mount transient voltage suppressor. 1500W peak power pulse. Vrwm = 17V; Vbr(min/max) = 18.9/23.9V @ It = 1.0mA; Ir(@ Vrwm) = 5uA; Vc = 30.5V @ Ipp = 49.2A |
1SMB5937 | PanJit | Surface mount silicon zener diode. Power 1.5 Watts. Nominal zener voltage Vz = 33 V. Test current Izt = 11.4 mA |
2EZ12 | PanJit | Glass passivated junction silicon zener diode. Power 2.0 Watts. Nominal zener voltage Vz = 12.0 V. Test current Izt = 41.5 mA. |
MMBZ5252B | PanJit | Surface mount silicon zener diode. Nominal zener voltage Vz = 24 V @ Izt. 500 mWatts zener diode. |
2EZ13 | PanJit | Glass passivated junction silicon zener diode. Power 2.0 Watts. Nominal zener voltage Vz = 13.0 V. Test current Izt = 38.5 mA. |
SA48 | PanJit | Glass passivated junction transient voltage suppressor. 500 Watt peak pulse power. Vrwm = 48.00V, Vbr(min/max) = 53.30/67.50V, It = 1 mA. |
1F3G | PanJit | Glass passivated junction fast switching rectifier. Max recurrent peak reverse voltage 200 V. Max average forward rectified current 1.0 A. |
PS151 | PanJit | Plastic silicon rectifier. Max recurrent peak reverse voltage 100 V. Max average forward rectified current 9.5mm lead length at Ta = 60degC 1.5 A. |
PG4003 | PanJit | Glass passivated junction plastic rectifier. Max recurrent peak reverse voltage 200 A. Max average forward rectified current 0.375inches lead length at 75degC 1.0 A.. |
1N4007 | PanJit | Plastic silicon rectifier. Max recurrent peak reverse voltage 1000 V. Max average forward rectified current 1.0 A. |
TSP065C | PanJit | Surfase mount bi-directional thyristor surge protector device. Rated repetitive peakoff-state voltage 65V. Breakover voltage 88V. On-state voltage 5V. Repetitive peakoff-state current 5uA Breakover current 800mA. |
P4KE200CA | PanJit | Glass passivated junction transient voltage suppressor. 400 Watt peak power. 1.0 Watt steady state. Vrwm = 171.00V, Vbr(min/max) = 190.00/210.00V, It = 1 mA. |
PS304R | PanJit | Fast switching plastic rectifier. Max recurrent peak reverse voltage 400 V. Max average forward rectified current 9.5mm lead length at Ta = 55degC 3.0 A. |
SD830YS | PanJit | Surfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 30 V. Max average forward rectified current at Tc = 85degC 8.0 A. |
P4SMAJ11A | PanJit | Surfase mount transient voltage suppressor. Reverse stand-off voltage 11 V. Breakdown voltage(min/max) 12.21/14.0 V. Test current 1.0 mA. Reverse leakage 5 uA. Max clamp voltag 18.2 V. Peak pulse current 22.0 A. |
SD630CS | PanJit | DPak surfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 30 V. Max average forward rectified current at Tc = 75degC 6.0 A. |
P4SMAJ18CA | PanJit | Surfase mount transient voltage suppressor. Reverse stand-off voltage 18 V. Breakdown voltage(min/max) 20.0/23.3 V. Test current 1.0 mA. Reverse leakage 5 uA. Max clamp voltage 29.2 V. Peak pulse current 13.7 A. |
3.0SMCJ24CA | PanJit | Surface mount transient voltage suppressor. Peak power pulse 3000 W. Vrwm = 24 V. Vbr(max/min) = 26.7/30.7 V @ It = 1.0 mA. Ir = 5 uA @ Vrwm. Vc = 38.9 V @ Ipp = 77.2 A. |
CP602 | PanJit | Single-phase silicon bridge - P.C. MTG 3A, heat-sink MTG 6A . Max recurrent peak reverse voltage 200V. Max average rectified output 6.0A(at Tc=50degC), 3.0(at Ta=25degC). |
P4SMAJ11 | PanJit | Surfase mount transient voltage suppressor. Reverse stand-off voltage 11 V. Breakdown voltage(min/max) 12.21/15.4 V. Test current 1.0 mA. Reverse leakage 5 uA. Max clamp voltage 20.1 V. Peak pulse current 20.0 A. |
MMBZ5231B | PanJit | Surface mount silicon zener diode. Nominal zener voltage Vz = 5.1 V @ Izt. 500 mWatts zener diode. |
GBPC15005W | PanJit | High current silicon bridge rectifier. Max recurrent peak reverse voltage 50 V. Max average forward current for resistive load at Tc=55degC 15 A. |