Путь:okDatasheet > Полупроводниковые Datasheet > PanJit Datasheet > PanJit-81
1 1SMB3EZ19 SB1020 1SMB5932 3.0SMCJ16A BZT52-C18S SK59 S1J CM2504 3.0SMCJ170 3.0SMCJ7.0C P4KE62A SK310 1.5SMCJ17 FR2B 3.0SMCJ120 1N4003 P4KE24C P6KE11A SD340S AM151 DI102 3.0SMCJ24C P6KE13A SA6.0CA 1SMC5361 1.5SMCJ210A BZT52-C4V7
Name component | Производитель | Заявка |
---|---|---|
1A2 | PanJit | Miniature plastic silicon rectifier. Max recurrent peak reverse voltage 100 V. Max average forward rectified current 1.0 A. |
3.0SMCJ5.0 | PanJit | Surface mount transient voltage suppressor. Peak power pulse 3000 Watt. Vrwm = 5.0 V. Ir = 1000 uA @ Vrwm. |
1N4001 | PanJit | Plastic silicon rectifier. Max recurrent peak reverse voltage 50 V. Max average forward rectified current 1.0 A. |
1SMB3EZ19 | PanJit | Surface mount silicon zener diode. Power 3.0 Watts. Nominal zener voltage Vz = 19 V. Test current Izt = 40 mA |
SB1020 | PanJit | Schottky barrier rectifier. Max recurrent peak reverse voltage 20.0 V. Max average forward rectified current at Tc = 90degC 10 A. |
1SMB5932 | PanJit | Surface mount silicon zener diode. Power 1.5 Watts. Nominal zener voltage Vz = 20 V. Test current Izt = 18.7 mA |
3.0SMCJ16A | PanJit | Surface mount transient voltage suppressor. Peak power pulse 3000 W. Vrwm = 16 V. Vbr(max/min) = 17.8/20.5 V @ It = 1.0 mA. Ir = 5 uA @ Vrwm. Vc = 26.0 V @ Ipp = 115.4 A. |
BZT52-C18S | PanJit | Surface mount silicon zener diode. Power 200 mWatts. Nominal zener voltage 18 V |
SK59 | PanJit | Surfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 90 V. Max average forward rectified current 5.0 A. |
S1J | PanJit | Surfase mount rectifier. Max recurrent peak reverse voltage 600 V. Max average forward rectified current at Tl = 100degC 1.0 A. |
CM2504 | PanJit | High current silicon bridge rectifier. Max recurrent peak reverse voltage 400V. Max average forward current for resistive load 25A. Non-repetive peak forward surge current at rated load 300A. |
3.0SMCJ170 | PanJit | Surface mount transient voltage suppressor. 3000 W peak power pulse. Vrwm = 170 V. Vbr(min/max) = 189/239.5.0V @ It. Ir = 5 uA @ Vrwm. Vc = 304 V @ Ipp = 9.8 A. |
3.0SMCJ7.0C | PanJit | Surface mount transient voltage suppressor. Peak power pulse 3000 Watt. Vrwm = 7.0 V. Vbr(max/min) = 7.78/9.86 V @ It = 10 mA. Ir = 400 uA @ Vrwm. Vc = 13.3 V @ Ipp = 225.6 A. |
P4KE62A | PanJit | Glass passivated junction transient voltage suppressor. 400 Watt peak power. 1.0 Watt steady state. Vrwm = 53.00V, Vbr(min/max) = 58.90/65.10V, It = 1mA. |
SK310 | PanJit | Surfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 100 V. Max average forward rectified current at Tl = 75degC 3.0 A. |
1.5SMCJ17 | PanJit | Surfase mount transient voltage suppressor. 1500W peak power pulse. Vrwm = 17V; Vbr(min/max) = 18.9/23.9V @ It = 1.0mA; Ir(@ Vrwm) = 5uA; Vc = 30.5V @ Ipp = 49.2A |
FR2B | PanJit | Surface mount ultrafast rectifier. Max recurrent peak reverse voltage 100V. Max average forward rectified current 2.0 A. |
3.0SMCJ120 | PanJit | Surface mount transient voltage suppressor. 3000 W peak power pulse. Vrwm = 120 V. Vbr(min/max) = 133/169.0V @ It. Ir = 5 uA @ Vrwm. Vc = 214 V @ Ipp = 14.0 A. |
1N4003 | PanJit | Plastic silicon rectifier. Max recurrent peak reverse voltage 200 V. Max average forward rectified current 1.0 A. |
P4KE24C | PanJit | Glass passivated junction transient voltage suppressor. 400 Watt peak power. 1.0 Watt steady state. Vrwm = 19.40V, Vbr(min/max) = 21.60/26.40V, It = 1 mA. |
P6KE11A | PanJit | Glass passivated junction transient voltage suppressor. 600 Watt peak power. 5.0 Watt steady state. Vrwm = 9.40V, Vbr(min/max) = 10.50/11.60V, It = 1 mA. |
SD340S | PanJit | Surfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 40 V. Max average forward rectified current at Tc = 75degC 3 A. |
AM151 | PanJit | Silicon miniature single-phase bridge. Max recurrent peak reverse voltage 100 V. Max average forward current 1.5 A. |
DI102 | PanJit | Glass passivated single-phase bridge rectifier. Max recurrent peak reverse voltage 200V. Max average forward current (Ta=40degC) 1.0A. |
3.0SMCJ24C | PanJit | Surface mount transient voltage suppressor. Peak power pulse 3000 W. Vrwm = 24 V. Vbr(max/min) = 26.7/33.8 V @ It = 1.0 mA. Ir = 5 uA @ Vrwm. Vc = 43.0 V @ Ipp = 69.8 A. |
P6KE13A | PanJit | Glass passivated junction transient voltage suppressor. 600 Watt peak power. 5.0 Watt steady state. Vrwm = 11.10V, Vbr(min/max) = 12.40/13.70V, It = 1 mA. |
SA6.0CA | PanJit | Glass passivated junction transient voltage suppressor. 500 Watt peak pulse power. Vrwm = 6.00V, Vbr(min/max) = 6.67/7.67V, It = 10 mA. |
1SMC5361 | PanJit | Surface mount silicon zener diode. Power 5.0 Watts. Nominal zener voltage Vz = 27 V. Test current Izt = 50 mA. |
1.5SMCJ210A | PanJit | Surface mount transient voltage suppressor. 1500W peak power pulse. Vrmv = 210V; Vbr(min/max) = 231/268.8V @ It = 1.0mA; Ir(@ Vrwm) = 5uA; Vc = 340V, @ Ipp = 4.4A |
BZT52-C4V7 | PanJit | Surface mount silicon zener diode. Power 410 mWatts. Nominal zener voltage 4.7 V @ Iz = 5 mA. |