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A8.5 P4SMAJ13 CP2502 SB540 2EZ16 TSP058SA 1A6 GBU10A SD850T SB1680DC P4KE91CA 15KP180 P4SMAJ22 3EZ30 UF801 MMBZ5251BW PS1010RS MMSZ5254B UF808F 3.0SMCJ18A P4SMAJ43CA 1SMC5364 P4KE250A P6KE12 1.5SMCJ26CA 1SMC5383 1E2A 1SMB5931
Name component | Производитель | Заявка |
---|---|---|
15KP22CA | PanJit | Glass passivated junction transient voltage suppressor. Vrwm = 22 V. Vbr(min/max) = 24.4/28.0 V @ It = 10 mA. Ir = 900 uA. Vc = 35.5 V @ Ipp = 404 A. |
MMSZ5231B | PanJit | Surface mount silicon zener diode. Nominal zener voltage Vz = 5.1 V @ Izt. 500 mWatts zener diode. |
SA8.5 | PanJit | Glass passivated junction transient voltage suppressor. 500 Watt peak pulse power. Vrwm = 8.50V, Vbr(min/max) = 9.44/11.92V, It = 1 mA. |
P4SMAJ13 | PanJit | Surfase mount transient voltage suppressor. Reverse stand-off voltage 13 V. Breakdown voltage(min/max) 14.4/18.2 V. Test current 1.0 mA. Reverse leakage 5 uA. Max clamp voltage 23.8 V. Peak pulse current 16.8 A. |
CP2502 | PanJit | High current silicon bridge rectifier. Max recurrent peak reverse voltage 200V. Max average forward current for resistive load at Tc=55degC 25A. |
SB540 | PanJit | High current schottky barrier rectifier. Max recurrent peak reverse voltage 40 V. Max average forward rectified current 0.375inches lead length 5.0 A. |
2EZ16 | PanJit | Glass passivated junction silicon zener diode. Power 2.0 Watts. Nominal zener voltage Vz = 16.0 V. Test current Izt = 31.2 mA. |
TSP058SA | PanJit | Surfase mount bi-directional thyristor surge protector device. Rated repetitive peakoff-state voltage 58V. Breakover voltage 77V. On-state voltage 5V. Repetitive peakoff-state current 5uA Breakover current 800mA. |
1A6 | PanJit | Miniature plastic silicon rectifier. Max recurrent peak reverse voltage 800 V. Max average forward rectified current 1.0 A. |
GBU10A | PanJit | Glass passivated single-phase bridge rectifier. Max recurrent peak reverse voltage 50 V. Max average forward rectified output current at Tc=100degC 10.0 A. |
SD850T | PanJit | Schottky barrier rectifier. Max recurrent peak reverse voltage 50 V. Max average forward rectified current at Tc = 75degC 8.0 A. |
SB1680DC | PanJit | DDPak surfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 80 V. Max average forward rectified current at Tc = 90degC 16.0 A. |
P4KE91CA | PanJit | Glass passivated junction transient voltage suppressor. 400 Watt peak power. 1.0 Watt steady state. Vrwm = 77.80V, Vbr(min/max) = 86.50/95.50V, It = 1 mA. |
15KP180 | PanJit | Glass passivated junction transient voltage suppressor. Vrwm = 180 V. Vbr(min/max) = 198/253.8 V @ It = 1.0 mA. Ir = 5 uA. Vc = 322 V @ Ipp = 47 A. |
P4SMAJ22 | PanJit | Surfase mount transient voltage suppressor. Reverse stand-off voltage 22 V. Breakdown voltage(min/max) 24.4/30.9 V. Test current 1.0 mA. Reverse leakage 5 uA. Max clamp voltage 39.4 V. Peak pulse current 10.1 A. |
3EZ30 | PanJit | Glass passivated junction silicon zener. Power 3.0 Watts. Vz = 30 V. Izt = 25 mA. |
UF801 | PanJit | Ultrafast switching rectifier. Max recurrent peak reverse voltage 100 V. Max average forward rectified current 8.0 A. |
MMBZ5251BW | PanJit | Surface mount silicon zener diode. Nominal zener voltage Vz = 22 V @ Izt. 200 mWatts zener diode. |
PS1010RS | PanJit | Fast switching plastic diode. Max recurrent peak reverse voltage 1000 V. Max average forward rectified current 9.5mm lead length at Ta = 55degC 1.0 A. |
MMSZ5254B | PanJit | Surface mount silicon zener diode. Nominal zener voltage Vz = 27 V @ Izt. 500 mWatts zener diode. |
UF808F | PanJit | Isolation ultrafast switching rectifier. Max recurrent peak reverse voltage 800 V. Max average forward rectified current 8.0 A. |
3.0SMCJ18A | PanJit | Surface mount transient voltage suppressor. Peak power pulse 3000 W. Vrwm = 18 V. Vbr(max/min) = 20.0/23.3 V @ It = 1.0 mA. Ir = 5 uA @ Vrwm. Vc = 29.2 V @ Ipp = 102.8 A. |
P4SMAJ43CA | PanJit | Surfase mount transient voltage suppressor. Reverse stand-off voltage 43 V. Breakdown voltage(min/max) 47.8/54.9 V. Test current 1.0 mA. Reverse leakage 5 uA. Max clamp voltage 69.4 V. Peak pulse current 5.7 A. |
1SMC5364 | PanJit | Surface mount silicon zener diode. Power 5.0 Watts. Nominal zener voltage Vz = 33 V. Test current Izt = 40 mA. |
P4KE250A | PanJit | Glass passivated junction transient voltage suppressor. 400 Watt peak power. 1.0 Watt steady state. Vrwm = 214.00V, Vbr(min/max) = 237.00/263.00V, It = 1 mA. |
P6KE12 | PanJit | Glass passivated junction transient voltage suppressor. 600 Watt peak power. 5.0 Watt steady state. Vrwm = 9.72V, Vbr(min/max) = 10.80/13.20V, It = 1 mA. |
1.5SMCJ26CA | PanJit | Surface mount transient voltage suppressor. 1500W peak power pulse. Vrmv = 26V; Vbr(min/max) = 28.9/33.2V @ It = 1.0mA; Ir(@ Vrwm) = 5uA; Vc = 42.1V, @ Ipp = 35.6A |
1SMC5383 | PanJit | Surface mount silicon zener diode. Power 5.0 Watts. Nominal zener voltage Vz = 150 V. Test current Izt = 8 mA. |
1E2A | PanJit | Superfast recovery rectifier. Max recurrent peak reverse voltage 150 V. Max average forward rectified current 1.0 A. |
1SMB5931 | PanJit | Surface mount silicon zener diode. Power 1.5 Watts. Nominal zener voltage Vz = 18 V. Test current Izt = 20.8 mA |