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P4KE350 P4SMAJ26 1SMC5369 1SMB3EZ56 SB3040CT SB250 SA70 SA8.0CA P4KE350C 1.5SMCJ8.5CA 3.0SMCJ24A UF150 1N5404 GBJ10J GBPC25005W 1SMB2EZ75 15KP18 BZX84C3V6W SA110A 1SMB5953 1N5383B P6KE15C SA13A ER102 UF1008F FL400 3KP54
Name component | Производитель | Заявка |
---|---|---|
SB150 | PanJit | Schottky barrier rectifier. Max recurrent peak reverse voltage 50 V. Max average forward rectified current 0.375inches lead length at Ta = 75degC 1.0 A. |
SA160CA | PanJit | Glass passivated junction transient voltage suppressor. 500 Watt peak pulse power. Vrwm = 160.00V, Vbr(min/max) = 178.00/205.00V, It = 1 mA. |
SA6.5A | PanJit | Glass passivated junction transient voltage suppressor. 500 Watt peak pulse power. Vrwm = 6.50V, Vbr(min/max) = 7.22/8.30V, It = 10 mA. |
P4KE350 | PanJit | Glass passivated junction transient voltage suppressor. 400 Watt peak power. 1.0 Watt steady state. Vrwm = 284.00V, Vbr(min/max) = 315.00/385.00V, It = 1 mA. |
P4SMAJ26 | PanJit | Surfase mount transient voltage suppressor. Reverse stand-off voltage 26 V. Breakdown voltage(min/max) 28.9/36.6 V. Test current 1.0 mA. Reverse leakage 5 uA. Max clamp voltage 46.6 V. Peak pulse current 8.6 A. |
1SMC5369 | PanJit | Surface mount silicon zener diode. Power 5.0 Watts. Nominal zener voltage Vz = 51 V. Test current Izt = 25 mA. |
1SMB3EZ56 | PanJit | Surface mount silicon zener diode. Power 3.0 Watts. Nominal zener voltage Vz = 56 V. Test current Izt = 13 mA |
SB3040CT | PanJit | Schottky barrier rectifier. Max recurrent peak reverse voltage 40.0 V. Max average forward rectified current at Tc = 90degC 30 A. |
SB250 | PanJit | Schottky barrier rectifier. Max recurrent peak reverse voltage 50 V. Max average forward rectified current 0.375inches lead length at Ta = 75degC 2.0 A. |
SA70 | PanJit | Glass passivated junction transient voltage suppressor. 500 Watt peak pulse power. Vrwm = 70.00V, Vbr(min/max) = 77.80/98.60V, It = 1 mA. |
SA8.0CA | PanJit | Glass passivated junction transient voltage suppressor. 500 Watt peak pulse power. Vrwm = 8.00V, Vbr(min/max) = 8.89/10.23V, It = 1 mA. |
P4KE350C | PanJit | Glass passivated junction transient voltage suppressor. 400 Watt peak power. 1.0 Watt steady state. Vrwm = 284.00V, Vbr(min/max) = 315.00/385.00V, It = 1 mA. |
1.5SMCJ8.5CA | PanJit | Surfase mount transient voltage suppressor. 1500W peak power pulse. Vrwm = 8.5V; Vbr(min/max) = 9.44/10.82V @ It = 1.0mA; Ir(@ Vrwm) = 20uA; Vc = 14.4V @ Ipp = 104.2A |
3.0SMCJ24A | PanJit | Surface mount transient voltage suppressor. Peak power pulse 3000 W. Vrwm = 24 V. Vbr(max/min) = 26.7/30.7 V @ It = 1.0 mA. Ir = 5 uA @ Vrwm. Vc = 38.9 V @ Ipp = 77.2 A. |
UF150 | PanJit | Ultrafast switching rectifier. Peak reverse voltage 50 V. Average forward current 1.5 A. |
1N5404 | PanJit | High current plastic silicon rectifier. Max reccurent peak reverse voltage 400V. Max average forward rectified current 3.0A. |
GBJ10J | PanJit | Glass passivated single-phase bridge rectifier. Max recurrent peak reverse voltage 600V. Max average forward rectified output current 10.0 A(Tc=100degC), 8.0A(Ta=45degC).. |
GBPC25005W | PanJit | High current silicon bridge rectifier. Max recurrent peak reverse voltage 50 V. Max average forward current for resistive load at Tc=55degC 25 A. |
1SMB2EZ75 | PanJit | Surface mount silicon zener diode. Nominal zener voltage Vz = 75.0 V. Test current Izt = 6.7 mA |
15KP18 | PanJit | Glass passivated junction transient voltage suppressor. Vrwm = 18 V. Vbr(min/max) = 20.0/25.3 V @ It = 50 mA. Ir = 5000 uA. Vc = 32.2 V @ Ipp = 439 A. |
BZX84C3V6W | PanJit | Surface mount silicon zener diode. Power 200 mWatts. Nominal zener voltage 3.6 V |
SA110A | PanJit | Glass passivated junction transient voltage suppressor. 500 Watt peak pulse power. Vrwm = 110.00V, Vbr(min/max) = 122.00/140.50V, It = 1 mA. |
1SMB5953 | PanJit | Surface mount silicon zener diode. Power 1.5 Watts. Nominal zener voltage Vz = 150 V. Test current Izt = 2.5 mA |
1N5383B | PanJit | Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 150V, Izt = 8.0mA |
P6KE15C | PanJit | Glass passivated junction transient voltage suppressor. 600 Watt peak power. 5.0 Watt steady state. Vrwm = 12.10V, Vbr(min/max) = 13.50/16.50V, It = 1 mA. |
SA13A | PanJit | Glass passivated junction transient voltage suppressor. 500 Watt peak pulse power. Vrwm = 13.00V, Vbr(min/max) = 14.40/16.50V, It = 1 mA. |
ER102 | PanJit | Superfast recovery rectifier. Max recurrent peak reverse voltage 200V. Max average forward current (9.5mm lead length atTa=55degC) 1.0A. |
UF1008F | PanJit | Ultrafast switching rectifier. Max recurrent peak reverse voltage 800 V. Max average forward rectified current 10.0 A. |
FL400 | PanJit | In-line miniature single phase silicon bridge. Max recurrent peak reverse voltage 50V. Max average rectified output current 4.0 A. |
3KP54 | PanJit | Glass passivated junction transient voltage suppressor. 3000 W peak pulse power. Vrwm = 54.00 V. Vbr = 60.00 V (min), 76.00 V (max). It = 1 mA. |