| Name component | Производитель | Заявка |
|---|
| SA45 | PanJit | Glass passivated junction transient voltage suppressor. 500 Watt peak pulse power. Vrwm = 45.00V, Vbr(min/max) = 50.00/63.30V, It = 1 mA. |
| SD350S | PanJit | Surfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 50 V. Max average forward rectified current at Tc = 75degC 3 A. |
| P6SMBJ60CA | PanJit | Surfase mount transient voltage suppressor. 600W. Vrwm = 60 V. Vbr(min/max) = 66.7/76.7 V. It = 1.0 mA. Ir = 5 uA. Vc = 96.8 V. Ipp = 6.2 A. |
| 1N5384B | PanJit | Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 160V, Izt = 8.0mA |
| SK510 | PanJit | Surfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 100 V. Max average forward rectified current 5.0 A. |
| SA15A | PanJit | Glass passivated junction transient voltage suppressor. 500 Watt peak pulse power. Vrwm = 15.00V, Vbr(min/max) = 16.70/19.20V, It = 1 mA. |
| 2EZ17 | PanJit | Glass passivated junction silicon zener diode. Power 2.0 Watts. Nominal zener voltage Vz = 17.0 V. Test current Izt = 29.4 mA. |
| ER804F | PanJit | Isolation superfast recovery rectifier. Max recurrent peak reverse voltage 400V. Max average forward rectified current 8.0 A. |
| 3.0SMCJ190 | PanJit | Surface mount transient voltage suppressor. 3000 W peak power pulse. Vrwm = 190 V. Vbr(min/max) = 209/267.9.0V @ It. Ir = 5 uA @ Vrwm. Vc = 340 V @ Ipp = 8.8 A. |
| CM15010 | PanJit | High current silicon bridge rectifier. Max recurrent peak reverse voltage 1000V. Max average forward current 15.0A |
| P4KE24A | PanJit | Glass passivated junction transient voltage suppressor. 400 Watt peak power. 1.0 Watt steady state. Vrwm = 20.50V, Vbr(min/max) = 22.80/25.20V, It = 1mA. |
| SS13 | PanJit | Surfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 30 V. Max average forward current 1.0 A. |
| PS206R | PanJit | Fast switching plastic rectifier. Max recurrent peak reverse voltage 600 V. Max average forward rectified current 9.5mm lead length at Ta = 55degC 2.0 A. |
| 1.5SMCJ190C | PanJit | Surface mount transient voltage suppressor. 1500W peak power pulse. Vrmv = 190V; Vbr(min/max) = 209/267.9V @ It = 1.0mA; Ir(@ Vrwm) = 5uA; Vc = 340V, @ Ipp = 4.4A |
| 3.0SMCJ58CA | PanJit | Surface mount transient voltage suppressor. 3000 W peak power pulse. Vrwm = 58 V. Vbr(min/max) = 64.4/74.1 V @ It. Ir = 5 uA @ Vrwm. Vc = 93.6 V @ Ipp = 32.0 A. |
| P4KE33 | PanJit | Glass passivated junction transient voltage suppressor. 400 Watt peak power. 1.0 Watt steady state. Vrwm = 26.80V, Vbr(min/max) = 29.70/36.30V, It = 1mA. |
| P6KE6.8CA | PanJit | Glass passivated junction transient voltage suppressor. 600 Watt peak power. 5.0 Watt steady state. Vrwm = 5.80V, Vbr(min/max) = 6.45/7.14V, It = 10 mA. |
| SA40 | PanJit | Glass passivated junction transient voltage suppressor. 500 Watt peak pulse power. Vrwm = 40.00V, Vbr(min/max) = 44.40/56.30V, It = 1 mA. |
| SB1080FCT | PanJit | Isolation schottky barrier rectifier. Max recurrent peak reverse voltage 80 V. Max average forward rectified current at Tc = 90degC 10 A. |
| 1.5SMCJ43 | PanJit | Surface mount transient voltage suppressor. 1500W peak power pulse. Vrmv = 43V; Vbr(min/max) = 47.8/60.5V @ It = 1.0mA; Ir(@ Vrwm) = 5uA; Vc = 76.7V, @ Ipp = 19.6A |
| P6KE22A | PanJit | Glass passivated junction transient voltage suppressor. 600 Watt peak power. 5.0 Watt steady state. Vrwm = 18.80V, Vbr(min/max) = 20.90/23.10V, It = 1 mA. |
| 1SMB3EZ51 | PanJit | Surface mount silicon zener diode. Power 3.0 Watts. Nominal zener voltage Vz = 51 V. Test current Izt = 15 mA |
| 1SMB2EZ20 | PanJit | Surface mount silicon zener diode. Nominal zener voltage Vz = 20.0 V. Test current Izt = 25.0 mA |
| CP608 | PanJit | Single-phase silicon bridge - P.C. MTG 3A, heat-sink MTG 6A . Max recurrent peak reverse voltage 800V. Max average rectified output 6.0A(at Tc=50degC), 3.0(at Ta=25degC). |
| 3EZ28 | PanJit | Glass passivated junction silicon zener. Power 3.0 Watts. Vz = 28 V. Izt = 27 mA. |
| 1.5SMCJ180 | PanJit | Surface mount transient voltage suppressor. 1500W peak power pulse. Vrmv = 180V; Vbr(min/max) = 198/253.8V @ It = 1.0mA; Ir(@ Vrwm) = 5uA; Vc = 322V, @ Ipp = 4.7A |
| 1SMB3EZ170 | PanJit | Surface mount silicon zener diode. Power 3.0 Watts. Nominal zener voltage Vz = 170 V. Test current Izt = 4.4 mA |
| MMSZ5227B | PanJit | Surface mount silicon zener diode. Nominal zener voltage Vz = 3.6 V @ Izt. 500 mWatts zener diode. |
| BZX84C10W | PanJit | Surface mount silicon zener diode. Power 200 mWatts. Nominal zener voltage 10 V |
| BZT52-C5V6 | PanJit | Surface mount silicon zener diode. Power 410 mWatts. Nominal zener voltage 5.6 V @ Iz = 5 mA. |
