MGY25N120D спецификации: Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel

Аналогичные MGY25N120D

MGY20N120D
- Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel
MGY25N120
- Insulated Gate Bipolar Transistor N-Channel
MGY25N120
- Insulated Gate Bipolar Transistor N-Channel
MGY25N120D
- Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel

MGY25N120D Datasheet и спецификация

Производитель : ON Semiconductor

Упаковка : TO-3PBL

Pins : 3

Темп. диапазон : Минимум 0 °C | Макс 0 °C

Размер : 188 KB

Заявка : Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel