Путь:OKDatasheet > Полупроводниковые Datasheet > IR Datasheet > IRFR224
IRFR224 спецификации: HEXFET power MOSFET. VDSS = 250V, RDS(on) = 1.1 Ohm, ID = 3.8A
Аналогичные IRFR224
- IRFR024N
- Power MOSFET, 55V, 17A
- IRFR120N
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.21 Ohm, ID = 9.4A
- IRFR120N
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.21 Ohm, ID = 9.4A
- IRFR13N15D
- HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.18 Ohm, ID = 14A
- IRFR13N20D
- HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.235 Ohm, ID = 13A
- IRFR210
- HEXFET power MOSFET. VDSS = 200V, RDS(on) = 1.5 Ohm, ID = 2.6A
- IRFR210
- HEXFET power MOSFET. VDSS = 200V, RDS(on) = 1.5 Ohm, ID = 2.6A
- IRFR214
- HEXFET power MOSFET. VDSS = 250V, RDS(on) = 2.0 Ohm, ID = 2.2A
IRFR224 Datasheet и спецификация
Производитель : IR
Упаковка : TO-252AA
Pins : 3
Темп. диапазон : Минимум -55 °C | Макс 150 °C
Размер : 192 KB
Заявка : HEXFET power MOSFET. VDSS = 250V, RDS(on) = 1.1 Ohm, ID = 3.8A
IRFR224 Скачать PDF