Аналогичные IRF5Y3315CM

  • IRF510
    • HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 5.6A
  • IRF510S
    • HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 5.6A
  • IRF520N
    • HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.20 Ohm, ID = 9.7A
  • IRF520NL
    • HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.20 Ohm, ID = 9.7A
  • IRF520NS
    • HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.20 Ohm, ID = 9.7A
  • IRF520VL
    • HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.165 Ohm, ID = 9.6A
  • IRF520VS
    • HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.165 Ohm, ID = 9.6A
  • IRF5210
    • HEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.06 Ohm, ID = -40A

IRF5Y3315CM Datasheet и спецификация

Производитель : IR 

Упаковка : TO-257AA 

Pins : 3 

Темп. диапазон : Минимум -55 °C | Макс 150 °C

Размер : 116 KB

Заявка : HEXFET power MOSFET thru-hole. BVDSS = 150V, RDS(on) = 0.085 Ohm, ID = 18A 

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