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IRF5210 спецификации: HEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.06 Ohm, ID = -40A
Аналогичные IRF5210
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- IRF5210
- HEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.06 Ohm, ID = -40A
IRF5210 Datasheet и спецификация
Производитель : IR
Упаковка :
Pins : 3
Темп. диапазон : Минимум -55 °C | Макс 175 °C
Размер : 137 KB
Заявка : HEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.06 Ohm, ID = -40A
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