Путь:OKDatasheet > Полупроводниковые Datasheet > IR Datasheet > IRF5Y1310CM
IRF5Y1310CM спецификации: HEXFET power MOSFET thru-hole. BVDSS = 100V, RDS(on) = 0.044 Ohm, ID = 18A
Аналогичные IRF5Y1310CM
- IRF510
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 5.6A
- IRF510S
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 5.6A
- IRF520N
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.20 Ohm, ID = 9.7A
- IRF520NL
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.20 Ohm, ID = 9.7A
- IRF520NS
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.20 Ohm, ID = 9.7A
- IRF520VL
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.165 Ohm, ID = 9.6A
- IRF520VS
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.165 Ohm, ID = 9.6A
- IRF5210
- HEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.06 Ohm, ID = -40A
IRF5Y1310CM Datasheet и спецификация
Производитель : IR
Упаковка : TO-257AA
Pins : 3
Темп. диапазон : Минимум -55 °C | Макс 150 °C
Размер : 117 KB
Заявка : HEXFET power MOSFET thru-hole. BVDSS = 100V, RDS(on) = 0.044 Ohm, ID = 18A
IRF5Y1310CM Скачать PDF