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IRF5810 спецификации: HEXFET power MOSFET. VDSS = -20V, RDS(on) = 90 mOhm, ID = -2.9A @ VGS = -4.5V, RDS(on) = 135 mOhm, ID = -2.3A @ VGS = -2.5V
Аналогичные IRF5810
- IRF510
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 5.6A
- IRF510S
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 5.6A
- IRF520N
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.20 Ohm, ID = 9.7A
- IRF520NL
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.20 Ohm, ID = 9.7A
- IRF520NS
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.20 Ohm, ID = 9.7A
- IRF520VL
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.165 Ohm, ID = 9.6A
- IRF520VS
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.165 Ohm, ID = 9.6A
- IRF5210
- HEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.06 Ohm, ID = -40A
IRF5810 Datasheet и спецификация
Производитель : IR
Упаковка : TSOP
Pins : 6
Темп. диапазон : Минимум -55 °C | Макс 150 °C
Размер : 228 KB
Заявка : HEXFET power MOSFET. VDSS = -20V, RDS(on) = 90 mOhm, ID = -2.9A @ VGS = -4.5V, RDS(on) = 135 mOhm, ID = -2.3A @ VGS = -2.5V
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