Аналогичные IRF5804

  • IRF510
    • HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 5.6A
  • IRF510S
    • HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 5.6A
  • IRF520N
    • HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.20 Ohm, ID = 9.7A
  • IRF520NL
    • HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.20 Ohm, ID = 9.7A
  • IRF520NS
    • HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.20 Ohm, ID = 9.7A
  • IRF520VL
    • HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.165 Ohm, ID = 9.6A
  • IRF520VS
    • HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.165 Ohm, ID = 9.6A
  • IRF5210
    • HEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.06 Ohm, ID = -40A

IRF5804 Datasheet и спецификация

Производитель : IR 

Упаковка : TSOP 

Pins : 6 

Темп. диапазон : Минимум -55 °C | Макс 150 °C

Размер : 108 KB

Заявка : HEXFET power MOSFET. VDSS = -40V, RDS(on) = 198 mOhm, ID = -2.5A @ VGS = -10V, RDS(on) = 334 mOhm, ID = -2.0A @ VGS = -4.5V 

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