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IRF5803 спецификации: HEXFET power MOSFET. VDSS = -40V, RDS(on) = 112 mOhm, ID = -3.4A @ VGS = -10V, RDS(on) = 190 mOhm , ID = -2.7A @ VGS = -4.5V
Аналогичные IRF5803
- IRF510
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 5.6A
- IRF510S
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 5.6A
- IRF520N
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.20 Ohm, ID = 9.7A
- IRF520NL
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.20 Ohm, ID = 9.7A
- IRF520NS
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.20 Ohm, ID = 9.7A
- IRF520VL
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- IRF520VS
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- IRF5210
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IRF5803 Datasheet и спецификация
Производитель : IR
Упаковка : TSOP
Pins : 6
Темп. диапазон : Минимум -55 °C | Макс 150 °C
Размер : 119 KB
Заявка : HEXFET power MOSFET. VDSS = -40V, RDS(on) = 112 mOhm, ID = -3.4A @ VGS = -10V, RDS(on) = 190 mOhm , ID = -2.7A @ VGS = -4.5V
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