Аналогичные IRF3706L

  • IRF3205
    • HEXFET power MOSFET. VDSS = 55V, RDS(on) = 8.0 mOhm, ID = 110A
  • IRF3205L
    • HEXFET power MOSFET. VDSS = 55V, RDS(on) = 8.0 mOhm, ID = 110A
  • IRF3205S
    • HEXFET power MOSFET. VDSS = 55V, RDS(on) = 8.0 mOhm, ID = 110A
  • IRF330
    • Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS =400V, RDS(on) = 1.0 Ohm, ID = 5.5A
  • IRF330
    • Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS =400V, RDS(on) = 1.0 Ohm, ID = 5.5A
  • IRF3315
    • HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.07 Ohm, ID = 27A
  • IRF3315L
    • HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.082 Ohm, ID = 21A
  • IRF3315L
    • HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.082 Ohm, ID = 21A

IRF3706L Datasheet и спецификация

Производитель : IR 

Упаковка : TO-262 

Pins : 3 

Темп. диапазон : Минимум -55 °C | Макс 175 °C

Размер : 159 KB

Заявка : HEXFET power MOSFET. VDSS = 20V, RDS(on) = 8.5 mOhm, ID = 77A 

IRF3706L Скачать PDF