IRF330 спецификации: Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS =400V, RDS(on) = 1.0 Ohm, ID = 5.5A

Аналогичные IRF330

IRF3205
- HEXFET power MOSFET. VDSS = 55V, RDS(on) = 8.0 mOhm, ID = 110A
IRF3205L
- HEXFET power MOSFET. VDSS = 55V, RDS(on) = 8.0 mOhm, ID = 110A
IRF3205S
- HEXFET power MOSFET. VDSS = 55V, RDS(on) = 8.0 mOhm, ID = 110A
IRF330
- Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS =400V, RDS(on) = 1.0 Ohm, ID = 5.5A
IRF330
- Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS =400V, RDS(on) = 1.0 Ohm, ID = 5.5A
IRF3315
- HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.07 Ohm, ID = 27A
IRF3315L
- HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.082 Ohm, ID = 21A
IRF3315L
- HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.082 Ohm, ID = 21A

IRF330 Datasheet и спецификация

Производитель : IR

Упаковка : TO-3

Pins : 3

Темп. диапазон : Минимум -55 °C | Макс 150 °C

Размер : 160 KB

Заявка : Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS =400V, RDS(on) = 1.0 Ohm, ID = 5.5A