IRC530 спецификации: HEXFET power MOSFET. Continuous drain current 14A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 100V.

Аналогичные IRC530

IRC530
- HEXFET power MOSFET. Continuous drain current 14A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 100V.
IRC540
- HEXFET power MOSFET. Continuous drain current 28A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 100V. Drain-to-source on-resistance 0.077Ohm

IRC530 Datasheet и спецификация

Производитель : IR

Упаковка : TO-220

Pins : 5

Темп. диапазон : Минимум -55 °C | Макс 175 °C

Размер : 248 KB

Заявка : HEXFET power MOSFET. Continuous drain current 14A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 100V.