HLB125E спецификации: Emitter to base voltage9V; NPN epitaxial planar transistor for light applications and low switch-mode power suppies

Аналогичные HLB125E

HLB120A
- Emitter to base voltage6V; NPN triple diffused planar type high voltage transistor for use in switching applications
HLB121I
- Emitter to base voltage6V; NPN triple diffused planar type high voltage transistor for use in switching applications
HLB122I
- Emitter to base voltage6V; NPN triple diffused planar type high voltage transistor for use in switching applications
HLB122J
- Emitter to base voltage6V; NPN triple diffused planar type high voltage transistor for use in switching applications
HLB123I
- Emitter to base voltage8V; NPN epitaxial planar transistor
HLB123T
- Emitter to base voltage8V; NPN epitaxial planar transistor
HLB124E
- Emitter to base voltage8V; NPN epitaxial planar transistor for high voltage, high speed switching inductive circuit and amplifier applications
HLB125E
- Emitter to base voltage9V; NPN epitaxial planar transistor for light applications and low switch-mode power suppies

HLB125E Datasheet и спецификация

Производитель : Hi Sincerity

Упаковка : TO-220

Pins : 3

Темп. диапазон : Минимум 0 °C | Макс 0 °C

Размер : 42 KB

Заявка : Emitter to base voltage9V; NPN epitaxial planar transistor for light applications and low switch-mode power suppies